Monolithic modular microwave source with integrated process gas distribution

ABSTRACT

Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

BACKGROUND 1) Field

Embodiments relate to the field of semiconductor manufacturing and, inparticular, to monolithic source arrays with integrated process gasdistribution for high-frequency sources.

2) Description of Related Art

Some high-frequency plasma sources include applicators that pass throughan opening in a dielectric plate. The opening through the dielectricplate allows for the applicator (e.g., a dielectric cavity resonator) tobe exposed to the plasma environment. However, it has been shown thatplasma is also generated in the opening in the dielectric plate in thespace surrounding the applicator. This has the potential of generatingplasma non-uniformities within the processing chamber. Furthermore,exposing the applicator to the plasma environment may lead to a morerapid degradation of the applicator.

In some embodiments, the applicators are positioned over the dielectricplate or within a cavity into (but not through) the dielectric plate.Such configurations have reduced coupling with the interior of thechamber and, therefore, does not provide an optimum plasma generation.The coupling of the high-frequency electromagnetic radiation with theinterior of the chamber is diminished in part due to the additionalinterface between the dielectric plate and the applicator across whichthe high-frequency electromagnetic radiation needs to propagate.Additionally, variations of the interface (e.g., positioning of theapplicator, surface roughness of the applicator and/or the dielectricplate, angle of the applicator relative to the dielectric plate, etc.)at each applicator and across different processing tools may result inplasma non-uniformities.

Particularly, when the applicators are discrete components from thedielectric plate, plasma non-uniformity (within a single processingchamber and/or across different processing chambers (e.g., chambermatching)) is more likely to occur. For example, with discretecomponents, small variations (e.g., variations in assembly, machiningtolerances, etc.) can result in plasma non-uniformities that negativelyaffect processing conditions within the chamber.

SUMMARY

Embodiments disclosed herein include a housing for a source array. In anembodiment, the housing comprises a conductive body, where theconductive body comprises a first surface and a second surface oppositefrom the first surface. In an embodiment a plurality of openings areformed through the conductive body and a channel is disposed into thesecond surface of the conductive body. In an embodiment, a cover is overthe channel, and the cover comprises first holes that pass through athickness of the cover. In an embodiment, the housing further comprisesa second hole through a thickness of the conductive body. In anembodiment, the second hole intersects with the channel.

Embodiments may also include an assembly for a processing tool thatcomprises a monolithic source array and a housing. In an embodiment, themonolithic source array comprises a dielectric plate with a firstsurface and a second surface opposite from the first surface, and aplurality of protrusions extending out from the first surface of thedielectric plate. In an embodiment, a plurality of gas distributionholes pass from the first surface to the second surface of thedielectric plate. In an embodiment, the housing is attached to themonolithic source array and comprises a conductive body with a thirdsurface and a fourth surface opposite from the third surface. In anembodiment, a plurality of openings through the conductive body, andeach of the openings surround a different one of the plurality ofprotrusions. In an embodiment, a channel is disposed into the fourthsurface of the conductive body, and a cover is over the channel. In anembodiment, the cover comprises a plurality of first holes that arefluidically coupled to a gas distribution hole. In an embodiment, thehousing further comprises a second hole through the conductive body thatintersects with the channel.

Embodiments may also comprise a processing tool. In an embodiment, theprocessing tool comprises a chamber and an assembly that interfaces withthe chamber. In an embodiment, the assembly comprises a monolithicsource array with a plurality of protrusions and a plurality of gasdistribution holes through a thickness of the monolithic source array.In an embodiment, the monolithic source array further comprises ahousing with a conductive body and openings through the conductive bodyfor receiving the plurality of protrusions. In an embodiment, a channelin the conductive body is fluidically coupled to the gas distributionholes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of a processing tool that comprises amodular high-frequency emission source with a monolithic source arraythat comprises a plurality of applicators, in accordance with anembodiment.

FIG. 2 is a block diagram of a modular high-frequency emission module,in accordance with an embodiment.

FIG. 3 is an exploded perspective view of an assembly, in accordancewith an embodiment.

FIG. 4A is a plan view illustration of a lid plate and gas distributionlines, in accordance with an embodiment.

FIG. 4B is a cross-sectional illustration of the lid plate in FIG. 4Aalong line B-B′, in accordance with an embodiment.

FIG. 5A is a perspective view illustration of a bottom surface of aconductive housing, in accordance with an embodiment.

FIG. 5B is a cross-sectional illustration of the conductive housing inFIG. 5A along line B-B′, in accordance with an embodiment.

FIG. 6 is a cross-sectional illustration of a portion of the assemblythat more clearly illustrates the gas distribution network, inaccordance with an embodiment.

FIG. 7 is a cross-sectional illustration of a processing tool thatincludes an assembly with an integrated gas distribution network, inaccordance with an embodiment.

FIG. 8 illustrates a block diagram of an exemplary computer system thatmay be used in conjunction with a high-frequency plasma tool, inaccordance with an embodiment.

DETAILED DESCRIPTION

Systems described herein include monolithic source arrays withintegrated gas distribution for high-frequency sources. In the followingdescription, numerous specific details are set forth in order to providea thorough understanding of embodiments. It will be apparent to oneskilled in the art that embodiments may be practiced without thesespecific details. In other instances, well-known aspects are notdescribed in detail in order to not unnecessarily obscure embodiments.Furthermore, it is to be understood that the various embodiments shownin the accompanying drawings are illustrative representations and arenot necessarily drawn to scale.

As noted above, high-frequency plasma sources with discrete applicatorsmay result in plasma non-uniformities within a chamber and innon-optimum injection of the high-frequency electromagnetic radiationinto the chamber. The non-uniformities in the plasma may arise fordifferent reasons, such as assembly issues, manufacturing tolerances,degradation, and the like. The non-optimum injection of thehigh-frequency electromagnetic radiation into the chamber may result (inpart) from the interface between the applicator and the dielectricplate.

Accordingly, embodiments disclosed herein include a monolithic sourcearray. In an embodiment, the monolithic source array comprises adielectric plate and a plurality of protrusions that extend up from asurface of the dielectric plate. Particularly, the protrusions and thedielectric plate form a monolithic part. That is, the protrusions andthe dielectric plate are fabricated from a single block of material. Theprotrusions have dimensions suitable for being used as the applicators.For example, holes into the protrusions may be fabricated thataccommodate a monopole antenna. The protrusions may, therefore, functionas a dielectric cavity resonator.

Implementing the source array as a monolithic part has severaladvantages. One benefit is that tight machining tolerances may bemaintained in order to provide a high degree of uniformity betweenparts. Whereas discrete applicators need assembly, the monolithic sourcearray avoids possible assembly variations. Additionally, the use of amonolithic source array provides improved injection of high-frequencyelectromagnetic radiation into the chamber, because there is no longer aphysical interface between the applicator and the dielectric plate.

Monolithic source arrays also provide improved plasma uniformity in thechamber. Particularly, the surface of the dielectric plate that isexposed to the plasma does not include any gaps to accommodate theapplicators. Furthermore, the lack of a physical interface between theprotrusions and the dielectric plate improves lateral electric fieldspreading in the dielectric plate.

Monolithic source arrays also require a different gas distributionscheme than previous solutions. Previously, the gas was flown into thechamber through openings in the dielectric plate that accommodated theapplicators. Since these openings are removed, a different solution isrequired. Accordingly, embodiments disclosed herein include a gasdistribution scheme that is implemented by different components of theassembly. For example, the horizontal distribution of the gas may beimplemented in the housing surrounding the monolithic source array.Accordingly, only vertical gas distribution holes need to be drilledinto monolithic source array. That is, the monolithic source array doesnot necessitate horizontal gas routing passages in some embodiments.This simplifies the manufacture of the monolithic source array andreduces costs.

Referring now to FIG. 1, a cross-sectional illustration of a plasmaprocessing tool 100 is shown, according to an embodiment. In someembodiments, the processing tool 100 may be a processing tool suitablefor any type of processing operation that utilizes a plasma. Forexample, the processing tool 100 may be a processing tool used forplasma enhanced chemical vapor deposition (PECVD), plasma enhancedatomic layer deposition (PEALD), etch and selective removal processes,and plasma cleaning. Additional embodiments may include a processingtool 100 that utilizes high-frequency electromagnetic radiation withoutthe generation of a plasma (e.g., microwave heating, etc.). As usedherein, “high-frequency” electromagnetic radiation includes radiofrequency radiation, very-high-frequency radiation, ultra-high-frequencyradiation, and microwave radiation. “High-frequency” may refer tofrequencies between 0.1 MHz and 300 GHz.

Generally, embodiments include a processing tool 100 that includes achamber 178. In processing tools 100, the chamber 178 may be a vacuumchamber. A vacuum chamber may include a pump (not shown) for removinggases from the chamber to provide the desired vacuum. Additionalembodiments may include a chamber 178 that includes one or more gaslines 170 for providing processing gasses into the chamber 178 andexhaust lines 172 for removing byproducts from the chamber 178. Whilenot shown, it is to be appreciated that gas may also be injected intothe chamber 178 through a monolithic source array 150 (e.g., as ashowerhead) for evenly distributing the processing gases over asubstrate 174.

In an embodiment, the substrate 174 may be supported on a chuck 176. Forexample, the chuck 176 may be any suitable chuck, such as anelectrostatic chuck. The chuck 176 may also include cooling lines and/ora heater to provide temperature control to the substrate 174 duringprocessing. Due to the modular configuration of the high-frequencyemission modules described herein, embodiments allow for the processingtool 100 to accommodate any sized substrate 174. For example, thesubstrate 174 may be a semiconductor wafer (e.g., 200 mm, 300 mm, 450mm, or larger). Alternative embodiments also include substrates 174other than semiconductor wafers. For example, embodiments may include aprocessing tool 100 configured for processing glass substrates, (e.g.,for display technologies).

According to an embodiment, the processing tool 100 includes a modularhigh-frequency emission source 104. The modular high-frequency emissionsource 104 may comprise an array of high-frequency emission modules 105.In an embodiment, each high-frequency emission module 105 may include anoscillator module 106, an amplification module 130, and an applicator142. As shown, the applicators 142 are schematically shown as beingintegrated into the monolithic source array 150. However, it is to beappreciated that the monolithic source array 150 may be a monolithicstructure that comprises one or more portions of the applicator 142(e.g., a dielectric resonating body) and a dielectric plate that facesthe interior of the chamber 178.

In an embodiment, the oscillator module 106 and the amplification module130 may comprise electrical components that are solid state electricalcomponents. In an embodiment, each of the plurality of oscillatormodules 106 may be communicatively coupled to different amplificationmodules 130. In some embodiments, there may be a 1:1 ratio betweenoscillator modules 106 and amplification modules 130. For example, eachoscillator module 106 may be electrically coupled to a singleamplification module 130. In an embodiment, the plurality of oscillatormodules 106 may generate incoherent electromagnetic radiation.Accordingly, the electromagnetic radiation induced in the chamber 178will not interact in a manner that results in an undesirableinterference pattern.

In an embodiment, each oscillator module 106 generates high-frequencyelectromagnetic radiation that is transmitted to the amplificationmodule 130. After processing by the amplification module 130, theelectromagnetic radiation is transmitted to the applicator 142. In anembodiment, the applicators 142 each emit electromagnetic radiation intothe chamber 178. In some embodiments, the applicators 142 couple theelectromagnetic radiation to the processing gasses in the chamber 178 toproduce a plasma.

Referring now to FIG. 2, a schematic of a solid state high-frequencyemission module 105 is shown, in accordance with an embodiment. In anembodiment, the high-frequency emission module 105 comprises anoscillator module 106. The oscillator module 106 may include a voltagecontrol circuit 210 for providing an input voltage to a voltagecontrolled oscillator 220 in order to produce high-frequencyelectromagnetic radiation at a desired frequency. Embodiments mayinclude an input voltage between approximately 1V and 10V DC. Thevoltage controlled oscillator 220 is an electronic oscillator whoseoscillation frequency is controlled by the input voltage. According toan embodiment, the input voltage from the voltage control circuit 210results in the voltage controlled oscillator 220 oscillating at adesired frequency. In an embodiment, the high-frequency electromagneticradiation may have a frequency between approximately 0.1 MHz and 30 MHz.In an embodiment, the high-frequency electromagnetic radiation may havea frequency between approximately 30 MHz and 300 MHz. In an embodiment,the high-frequency electromagnetic radiation may have a frequencybetween approximately 300 MHz and 1 GHz. In an embodiment, thehigh-frequency electromagnetic radiation may have a frequency betweenapproximately 1 GHz and 300 GHz.

According to an embodiment, the electromagnetic radiation is transmittedfrom the voltage controlled oscillator 220 to an amplification module130. The amplification module 130 may include a driver/pre-amplifier234, and a main power amplifier 236 that are each coupled to a powersupply 239. According to an embodiment, the amplification module 130 mayoperate in a pulse mode. For example, the amplification module 130 mayhave a duty cycle between 1% and 99%. In a more particular embodiment,the amplification module 130 may have a duty cycle between approximately15% and 50%.

In an embodiment, the electromagnetic radiation may be transmitted tothe thermal break 249 and the applicator 142 after being processed bythe amplification module 130. However, part of the power transmitted tothe thermal break 249 may be reflected back due to the mismatch in theoutput impedance. Accordingly, some embodiments include a detectormodule 281 that allows for the level of forward power 283 and reflectedpower 282 to be sensed and fed back to the control circuit module 221.It is to be appreciated that the detector module 281 may be located atone or more different locations in the system (e.g., between thecirculator 238 and the thermal break 249). In an embodiment, the controlcircuit module 221 interprets the forward power 283 and the reflectedpower 282, and determines the level for the control signal 285 that iscommunicatively coupled to the oscillator module 106 and the level forthe control signal 286 that is communicatively coupled to theamplification module 130. In an embodiment, control signal 285 adjuststhe oscillator module 106 to optimize the high-frequency radiationcoupled to the amplification module 130. In an embodiment, controlsignal 286 adjusts the amplification module 130 to optimize the outputpower coupled to the applicator 142 through the thermal break 249. In anembodiment, the feedback control of the oscillator module 106 and theamplification module 130, in addition to the tailoring of the impedancematching in the thermal break 249 may allow for the level of thereflected power to be less than approximately 5% of the forward power.In some embodiments, the feedback control of the oscillator module 106and the amplification module 130 may allow for the level of thereflected power to be less than approximately 2% of the forward power.

Accordingly, embodiments allow for an increased percentage of theforward power to be coupled into the processing chamber 178, andincreases the available power coupled to the plasma. Furthermore,impedance tuning using a feedback control is superior to impedancetuning in typical slot-plate antennas. In slot-plate antennas, theimpedance tuning involves moving two dielectric slugs formed in theapplicator. This involves mechanical motion of two separate componentsin the applicator, which increases the complexity of the applicator.Furthermore, the mechanical motion may not be as precise as the changein frequency that may be provided by a voltage controlled oscillator220.

Referring now to FIG. 3, an exploded perspective view illustration of anassembly 370 is shown, in accordance with an embodiment. In anembodiment, the assembly 370 comprises a monolithic source array 350, ahousing 372, and a lid plate 376. As indicated by the arrows, thehousing 372 fits over and around the monolithic source array 350, andthe lid plate 376 covers the housing 372. In the illustrated embodiment,the assembly 370 is shown as having a substantially circular shape.However, it is to be appreciated that the assembly 370 may have anydesired shape (e.g., polygonal, elliptical, wedge shaped, or the like).

In an embodiment, the monolithic source array 350 may comprise adielectric plate 360 and a plurality of protrusions 366 that extend upfrom the dielectric plate 360. In an embodiment, the dielectric plate360 and the plurality of protrusions 366 are a monolithic structure.That is, there is no physical interface between a bottom of theprotrusions 366 and the dielectric plate 360. As used herein, a“physical interface” refers to a first surface of a first discrete bodycontacting a second surface of a second discrete body.

Each of the protrusions 366 are a portion of the applicator 142 used toinject high-frequency electromagnetic radiation into a processingchamber 178. Particularly, the protrusions 366 function as thedielectric cavity resonator of the applicator 142. In an embodiment, themonolithic source array 350 comprises a dielectric material. Forexample, the monolithic source array 350 may be a ceramic material. Inan embodiment, one suitable ceramic material that may be used for themonolithic source array 350 is Al₂O₃. The monolithic structure may befabricated from a single block of material. In other embodiments, arough shape of the monolithic source array 350 may be formed with amolding process, and subsequently machined to provide the finalstructure with the desired dimensions. For example, green statemachining and firing may be used to provide the desired shape of themonolithic source array 350. In the illustrated embodiment, theprotrusions 366 are shown as having a circular cross-section (whenviewed along a plane parallel to the dielectric plate 360). However, itis to be appreciated that the protrusions 366 may comprise manydifferent cross-sections. For example, the cross-section of theprotrusions 366 may have any shape that is centrally symmetric.

In an embodiment, the housing 372 comprises a conductive body 373. Forexample, the conductive body 373 may be aluminum or the like. Thehousing comprises a plurality of openings 374. The openings 374 may passentirely through a thickness of the conductive body 373. The openings374 may be sized to receive the protrusions 366. For example, as thehousing 372 is displaced towards the monolithic source array 350 (asindicated by the arrow) the protrusions 366 will be inserted into theopenings 374. In an embodiment, the openings 374 may have a diameterthat is approximately 15 mm or greater.

In the illustrated embodiment, the housing 372 is shown as a singleconductive body 373. However, it is to be appreciated that the housing372 may comprise one or more discrete conductive components. Thediscrete components may be individually grounded, or the discretecomponents may be joined mechanically or by any form of metallicbonding, to form a single electrically conductive body 373.

In an embodiment, the lid plate 376 may comprise a conductive body 379.In an embodiment, the conductive body 379 is formed from the samematerial as the conductive body 373 of the housing 372. For example, thelid plate 376 may comprise aluminum. In an embodiment, the lid plate 376may be secured to the housing 372 using any suitable fasteningmechanism. For example, the lid plate 376 may be secured to the housing372 with bolts or the like. In some embodiments, the lid plate 376 andthe housing 372 may also be implemented as a single monolithicstructure. In an embodiment, the lid plate 376 and the housing are bothelectrically grounded during operation of the processing tool.

Referring now to FIGS. 4A and 4B, more detailed plan view andcross-sectional view illustrations of the lid plate 476 are shown,respectively, in accordance with an embodiment. As shown, gas lines arecoupled to a first surface 412 of the lid plate 476. For example, asingle input 415 may split to a plurality of first gas lines 417 _(A-C).Each of the first gas lines 417 may be further distributed at a splitter413 to second gas lines 418 _(A-F). The second gas lines 418 are coupledto the lid plate 476 (e.g., with couplers 419 that are bolted to the lidplate 476). In an embodiment, the couplers 419 may secure an O-ring (notshown) that seals the junction between the end of the second gas line418 and the hole 414 through the lid plate 476. As shown in FIG. 4B, thehole 414 passes through the conductive body 479 from the first surface412 to a second surface 411 of the lid plate 476.

In an embodiment, each of the first gas lines 417 are substantially thesame length, and each of the second gas lines 418 are substantially thesame length. As such, a length of each path (from the input 415 to oneof the holes 414 in the lid plate 476) is substantially uniform. Whileone example of a gas line routing scheme is provided, it is to beappreciated that any number of holes 414 and any number of gas lines417/418 may be used to route a processing gas to the lid plate 476.

Referring now to FIG. 5A, a perspective view illustration of the housing572 is shown, in accordance with an embodiment. The illustratedembodiment depicts a second surface 533 of the housing 572. The secondsurface 533 is the surface that faces towards the monolithic sourcearray, and a first surface 534 faces towards the lid plate. As shown,the housing 572 comprises a conductive body 573 with a plurality ofopenings 574.

In an embodiment, a plurality of gas distribution channels are disposedinto a second surface 533. The gas distribution channels are covered bya cover 531. In an embodiment, the cover 531 is welded to the conductivebody 573 to provide an air-tight seal. The gas distribution channels andthe covers 531 distribute gas from an outer perimeter of the housing 572towards an axial center of the housing 572. In the illustratedembodiment each of the gas distribution channels and the cover 531encircle one or more of the openings 574. However, it is to beappreciated that other embodiments may include gas distribution channelsthat take any path. In the illustrated embodiment, a single continuousgas distribution channel and a cover 531 are shown. However, it is to beappreciated that embodiments may include any number of gas distributionchannels (e.g., one or more gas distribution channels that may or maynot be fluidically coupled together), and each gas distribution channelmay have a different cover. Furthermore, it is to be appreciated thatthe openings 574 and the gas distribution channels are not fluidicallycoupled to each other. That is, during operation processing gasses thatare flown through the gas distribution channels, and processing gassesmay not pass through the openings 574.

In an embodiment, groups 532 of first holes 537 may pass through thecover 531. The groups 532 of first holes 537 provide exit locations forgas within the gas distribution channels. In an embodiment, the numberof first holes 537 in each group 532 may be non-uniform. For example,groups 532A may have one or two holes 537, groups 532 _(B) may havethree or four holes 537, and groups 532 _(C) may have more than fourholes 537. That is, locations closer to the axial center of the housing572 may have groups with a larger number of holes 537 than locationscloser to the perimeter of the housing 572. In an embodiment, each group532 may be surrounded by an O-ring or other sealing member. The O-ringcompresses against the monolithic source array to provide a seal.

Referring now to FIG. 5B, a cross-sectional illustration of the housing572 in FIG. 5A along line B-B′ is shown, in accordance with anembodiment. The cross-sectional illustration more clearly illustratesthe gas distribution channels 530. The channels 530 are recessed intothe second surface 533 of the conductive body 573. In thecross-sectional illustration, the channels 530 are shown asdiscontinuous, but it is to be appreciated that portions of the channels530 may wrap around the openings 574 out of the plane of FIG. 5B inorder to fluidically couple portions of the channels 530 together. Forexample, the illustrated portions of channel 530A are fluidicallycoupled together, and the illustrated portions of the channel 5308 arefluidically coupled together.

In an embodiment, the channels 530 are fed processing gasses from thesecond holes 535 that pass vertically through the conductive body 573.That is, the second holes 535 intersect with the channels 530. Thesecond holes 535 may be fluidically coupled to the holes 414 through thelid plate 476. In an embodiment, the second holes 535 are locatedproximate to the edge of the housing 572, and the channels 530distribute the processing gasses horizontally. The covers 531 are overthe channels 530 and provide a seal, except for locations of the groups532 of first holes 537. The groups 532 _(B) and 532 _(C) are visible inthe illustrated cross-section and the group 532 _(A) is out of the planeshown in FIG. 5B. The distribution of the groups 532 of first holes 537along the channel 530 provides uniform gas distribution across thesurface of a workpiece in the processing tool.

Referring now to FIG. 6, a cross-sectional illustration of a portion ofthe assembly 670 is shown, in accordance with an embodiment. Theassembly 670 comprises a monolithic source array 650, a housing 672, anda lid plate 676.

In an embodiment, the second surface 633 of the conductive body 673 issupported by the first surface 661 of the dielectric plate 660. In theillustrated embodiment, the conductive body 673 is directly supported bythe first surface 661, but it is to be appreciated that a thermalinterface material or the like may separate the conductive body 673 fromthe first surface 661. In an embodiment, the second surface 662 of thedielectric plate 660 faces away from the housing 672. The protrusions666 of the monolithic source array 650 fit into openings in the housing672. In an embodiment, the lid plate 676 covers the housing 672 and theprotrusions 666. For example, a second surface 611 of the lid plate 676covers the first surface 634 of the housing 672. A monopole antenna 668may pass through the lid plate 676 and extend into a hole 665 in theaxial center of the protrusion 666. The width of the hole 665 may begreater than the width of the monopole antenna 668. Accordingly,tolerances for thermal expansion are provided in some embodiments inorder to prevent damage to the monolithic source array 650. The monopoleantenna 668 is electrically coupled to a power source (e.g., ahigh-frequency emission module 105).

In an embodiment, the gas distribution network passes through thecomponents of the assembly 670. The gas is initially fed into theassembly 670 by a gas line 618. The gas line 618 is coupled to the firstsurface 612 of the lid plate 676 by a coupler 619. An O-ring (not shown)may be positioned between the coupler 619 and the first surface 612.Processing gasses then travel through a hole 614 that passes through thelid plate 676. The gas distribution continues with a hole 635 thatpasses through the conductive body 673 of the housing 672. In anembodiment, an O-ring or the like (not shown) may surround the interfacebetween the hole 614 and the hole 635 to provide a seal.

As shown, the hole 635 intersects with channel 630. The channel 630laterally distributes the processing gas. The channel 630 is sealed by acover 631, and gas is distributed out of the housing 672 by passingthrough groups 632 of holes 637 in the cover 631. In an embodiment, thegas then flows through holes 663 through the dielectric plate 660. Theholes 663 may be aligned with the holes 637 in the groups 632. In anembodiment, the holes 663 through the dielectric plate 660 have adiameter that is larger than the diameter of the holes 637 through thecover 631. In an embodiment, an O-ring or the like (not shown) surroundsthe interface between the holes 637 in the cover 631 and the holes 663through the dielectric plate 660.

Referring now to FIG. 7, a cross-sectional illustration of a processingtool 700 that includes an assembly 770 is shown, in accordance with anembodiment. In an embodiment, the processing tool comprises a chamber778 that is sealed by an assembly 770. For example, the assembly 770 mayrest against one or more O-rings 781 to provide a vacuum seal to aninterior volume 783 of the chamber 778. In other embodiments, theassembly 770 may interface with the chamber 778. That is, the assembly770 may be part of a lid that seals the chamber 778. In an embodiment,the processing tool 700 may comprise a plurality of processing volumes(which may be fluidically coupled together), with each processing volumehaving a different assembly 770. In an embodiment, a chuck 779 or thelike may support a workpiece 774 (e.g., wafer, substrate, etc.).

In an embodiment, the assembly 770 may be substantially similar to theassemblies 670 described above. For example, the assembly 770 comprisesa monolithic source array 750, a housing 772, and a lid plate 776. Themonolithic source array 750 may comprise a dielectric plate 760 and aplurality of protrusions 766 extending up from the dielectric plate 760.The housing 772 may having openings sized to receive the protrusions766. In an embodiment, monopole antennas 768 may extend into holes inthe protrusions 766. The monopole antennas 768 may pass through a lidplate 776 over the housing 772 and the protrusions 766.

In an embodiment, the chamber volume 783 may be suitable for striking aplasma 782. That is, the chamber volume 783 may be a vacuum chamber. Inorder to strike the plasma 782, processing gasses may be flown into thechamber volume 783. The processing gasses may enter the assembly 770 viaa gas line 718. The processing gas then passes through a hole 714through the lid plate 776 and enters a hole 735 in the housing 772. Thehole 735 intersects a gas distribution channel 730 that laterallydistributes the processing gas. The processing gas exits the channel 730through groups 732 of holes 737 in a cover over the channel 730. Theprocessing gas then passes through gas distribution holes 763 throughthe dielectric plate 760 of the monolithic source array 750 and entersthe chamber volume 783.

Referring now to FIG. 8, a block diagram of an exemplary computer system860 of a processing tool is illustrated in accordance with anembodiment. In an embodiment, computer system 860 is coupled to andcontrols processing in the processing tool. Computer system 860 may beconnected (e.g., networked) to other machines in a Local Area Network(LAN), an intranet, an extranet, or the Internet. Computer system 860may operate in the capacity of a server or a client machine in aclient-server network environment, or as a peer machine in apeer-to-peer (or distributed) network environment. Computer system 860may be a personal computer (PC), a tablet PC, a set-top box (STB), aPersonal Digital Assistant (PDA), a cellular telephone, a web appliance,a server, a network router, switch or bridge, or any machine capable ofexecuting a set of instructions (sequential or otherwise) that specifyactions to be taken by that machine. Further, while only a singlemachine is illustrated for computer system 860, the term “machine” shallalso be taken to include any collection of machines (e.g., computers)that individually or jointly execute a set (or multiple sets) ofinstructions to perform any one or more of the methodologies describedherein.

Computer system 860 may include a computer program product, or software822, having a non-transitory machine-readable medium having storedthereon instructions, which may be used to program computer system 860(or other electronic devices) to perform a process according toembodiments. A machine-readable medium includes any mechanism forstoring or transmitting information in a form readable by a machine(e.g., a computer). For example, a machine-readable (e.g.,computer-readable) medium includes a machine (e.g., a computer) readablestorage medium (e.g., read only memory (“ROM”), random access memory(“RAM”), magnetic disk storage media, optical storage media, flashmemory devices, etc.), a machine (e.g., computer) readable transmissionmedium (electrical, optical, acoustical or other form of propagatedsignals (e.g., infrared signals, digital signals, etc.)), etc.

In an embodiment, computer system 860 includes a system processor 802, amain memory 804 (e.g., read-only memory (ROM), flash memory, dynamicrandom access memory (DRAM) such as synchronous DRAM (SDRAM) or RambusDRAM (RDRAM), etc.), a static memory 806 (e.g., flash memory, staticrandom access memory (SRAM), etc.), and a secondary memory 818 (e.g., adata storage device), which communicate with each other via a bus 830.

System processor 802 represents one or more general-purpose processingdevices such as a microsystem processor, central processing unit, or thelike. More particularly, the system processor may be a complexinstruction set computing (CISC) microsystem processor, reducedinstruction set computing (RISC) microsystem processor, very longinstruction word (VLIW) microsystem processor, a system processorimplementing other instruction sets, or system processors implementing acombination of instruction sets. System processor 802 may also be one ormore special-purpose processing devices such as an application specificintegrated circuit (ASIC), a field programmable gate array (FPGA), adigital signal system processor (DSP), network system processor, or thelike. System processor 802 is configured to execute the processing logic826 for performing the operations described herein.

The computer system 860 may further include a system network interfacedevice 808 for communicating with other devices or machines. Thecomputer system 860 may also include a video display unit 810 (e.g., aliquid crystal display (LCD), a light emitting diode display (LED), or acathode ray tube (CRT)), an alphanumeric input device 812 (e.g., akeyboard), a cursor control device 814 (e.g., a mouse), and a signalgeneration device 816 (e.g., a speaker).

The secondary memory 818 may include a machine-accessible storage medium832 (or more specifically a computer-readable storage medium) on whichis stored one or more sets of instructions (e.g., software 822)embodying any one or more of the methodologies or functions describedherein. The software 822 may also reside, completely or at leastpartially, within the main memory 804 and/or within the system processor802 during execution thereof by the computer system 860, the main memory804 and the system processor 802 also constituting machine-readablestorage media. The software 822 may further be transmitted or receivedover a network 820 via the system network interface device 808. In anembodiment, the network interface device 808 may operate using RFcoupling, optical coupling, acoustic coupling, or inductive coupling.

While the machine-accessible storage medium 832 is shown in an exemplaryembodiment to be a single medium, the term “machine-readable storagemedium” should be taken to include a single medium or multiple media(e.g., a centralized or distributed database, and/or associated cachesand servers) that store the one or more sets of instructions. The term“machine-readable storage medium” shall also be taken to include anymedium that is capable of storing or encoding a set of instructions forexecution by the machine and that cause the machine to perform any oneor more of the methodologies. The term “machine-readable storage medium”shall accordingly be taken to include, but not be limited to,solid-state memories, and optical and magnetic media.

In the foregoing specification, specific exemplary embodiments have beendescribed. It will be evident that various modifications may be madethereto without departing from the scope of the following claims. Thespecification and drawings are, accordingly, to be regarded in anillustrative sense rather than a restrictive sense.

What is claimed is:
 1. A housing, comprising: a conductive body, whereinthe conductive body comprises a first surface and a second surfaceopposite from the first surface; a plurality of openings through theconductive body; a channel disposed into the second surface of theconductive body; a cover over the channel, and wherein the covercomprises first holes that pass through a thickness of the cover; and asecond hole through a thickness of the conductive body, wherein thesecond hole intersects with the channel.
 2. The housing of claim 1,wherein the cover is welded to the conductive body.
 3. The housing ofclaim 1, wherein the channel encircles at least one of the plurality ofopenings.
 4. The housing of claim 1, wherein the second hole is furtherfrom an axial center of the conductive body than the first holes.
 5. Thehousing of claim 1, wherein the first holes are arrange in a pluralityof groups, wherein first groups have a first number of first holes, andwherein second groups have a second number of first holes that isgreater than the first number.
 6. The housing of claim 5, wherein thefirst groups are further from an axial center of the conductive bodythan the second groups.
 7. The housing of claim 1, wherein a diameter ofeach opening is approximately 15mm or greater.
 8. The housing of claim1, further comprising: a plurality of channels into the second surfaceof the conductive body; and a plurality of second holes, wherein eachsecond hole intersects a different one of the plurality of channels. 9.The housing of claim 8, further comprising: a lid plate over the firstsurface of the conductive body.
 10. The housing of claim 9, furthercomprising: a plurality of third holes through the lid plate, whereineach of the third holes is fluidically coupled to a different one of thesecond holes.
 11. The housing of claim 10, wherein the plurality ofthird holes are fluidically coupled to a gas inlet by a plurality of gaslines.
 12. The housing of claim 11, wherein a distance along the gaslines between the gas inlet and each of the of the third holes issubstantially uniform.
 13. An assembly, comprising: a monolithic sourcearray, wherein the monolithic source array comprises: a dielectricplate, wherein the dielectric plate comprises a first surface and asecond surface opposite from the first surface; a plurality ofprotrusions extending out from the first surface of the dielectricplate; and a plurality of gas distribution holes from the first surfaceto the second surface of the dielectric plate; and a housing attached tothe monolithic source array, wherein the housing comprises: a conductivebody, wherein the conductive body comprises a third surface and a fourthsurface opposite from the third surface; a plurality of openings throughthe conductive body, wherein each of the openings surround a differentone of the plurality of protrusions; a channel into the fourth surfaceof the conductive body; a cover over the channel, wherein the covercomprises a plurality of first holes, wherein each of the first holes isfluidically coupled to a gas distribution hole; and a second holethrough the conductive body, wherein the second hole intersects with thechannel.
 14. The assembly of claim 13, further comprising: a lid plateover the third surface of the conductive body.
 15. The assembly of claim14, further comprising: a third hole through the lid plate, wherein thethird hole is fluidically coupled to the second hole.
 16. The assemblyof claim 14, wherein the lid plate is bolted to the conductive body. 17.The assembly of claim 13, wherein the channel encircles at least one ofthe openings.
 18. A processing tool, comprising: a chamber; and anassembly interfacing with the chamber, wherein the assembly comprises: amonolithic source array, wherein the monolithic source array comprises aplurality of protrusions and a plurality of gas distribution holesthrough a thickness of the monolithic source array; and a housing,wherein the housing comprises: a conductive body; openings through theconductive body for receiving the plurality of protrusions; and achannel in the conductive body, wherein the channel is fluidicallycoupled to the gas distribution holes.
 19. The processing tool of claim18, further comprising: a lid plate over the housing, wherein the lidplate comprises a hole that passes through the lid plate and isfluidically coupled to the channel.
 20. The processing tool of claim 18,wherein the channel encircles at least one of the openings through theconductive body.